? semiconductor components industries, llc, 2001 november, 2001 rev. 4 1 publication order number: mgp15n43cl/d mgp15n43cl, mgb15n43cl preferred device ignition igbt 15 amps, 430 volts nchannel to220 and d 2 pak this logic level insulated gate bipolar transistor (igbt) features monolithic circuitry integrating esd and overvoltage clamped protection for use in inductive coil drivers applications. primary uses include ignition, direct fuel injection, or wherever high voltage and high current switching is required. ? gateemitter esd protection ? temperature compensated gatecollector voltage clamp limits stress applied to load ? integrated esd diode protection ? low threshold voltage to interface power loads to logic or microprocessor devices ? low saturation voltage ? high pulsed current capability maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit collectoremitter voltage v ces 460 v dc collectorgate voltage v cer 460 v dc gateemitter voltage v ge 22 v dc collector currentcontinuous @ t c = 25 c i c 15 a dc total power dissipation @ t c = 25 c derate above 25 c p d 136 1.0 watts w/ c operating and storage temperature range t j , t stg 55 to 175 c unclamped draintosource avalanche characteristics (t j 150 c) characteristic symbol value unit single pulse collectortoemitter avalanche energy v cc = 50 v, v ge = 5 v, pk i l = 14.2 a, l = 3 mh, starting t j = 25 c v cc = 50 v, v ge = 5 v, pk i l = 10 a, l = 3 mh, starting t j = 150 c e as 300 150 mj device package shipping ordering information mgp15n43cl to220 50 units/rail mgb15n43clt4 d2pak 800 tape & reel c e g 15 amperes 430 volts (clamped) v ce(on) = 1.8 m w to220ab case 221a style 9 1 2 3 4 http://onsemi.com nchannel marking diagrams & pin assignments g15n43cl = device code y = year ww = work week g15n43cl yww 1 gate 3 emitter 4 collector 2 collector g15n43cl yww 1 anode 3 anode 4 cathode 2 cathode 1 2 3 4 d 2 pak case 418b style 3 preferred devices are recommended choices for future use and best overall value.
mgp15n43cl, mgb15n43cl http://onsemi.com 2 thermal characteristics characteristic symbol value unit thermal resistance, junction to case r q jc 1.0 c/w thermal resistance, junction to ambient to220 r q ja 62.5 d 2 pak r q ja 50 maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds t l 275 c electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol test conditions min typ max unit off characteristics collectoremitter clamp voltage bv ces i c = 2 ma t j = 40 c to 175 c 400 430 460 v dc zero gate voltage collector current i ces v ce = 300 v, v ge = 0, t j = 25 c 40 m a dc v ce = 300 v, v ge = 0, t j = 150 c 200 reverse collectoremitter leakage current i ecs v ce = 24 v 1.0 ma gateemitter clamp voltage bv ges i g = 5 ma 17 22 v dc gateemitter leakage current i ges v ge = 10 v 2.0 m a dc on characteristics (note 1.) gate threshold voltage v ge(th) i c = 1 ma v ge = v ce 1.2 1.5 2.1 v dc threshold temperature coefficient (negative) 4.4 mv/ c collectortoemitter onvoltage v ce(on) i c = 6 a, v ge = 4 v 1.8 v dc collectortoemitter onvoltage v ce(on) i c = 10 a, v ge = 4.5 v, t j = 150 c 1.8 v dc forward transconductance gfs v ce = 5 v, i c = 6 a 8.0 15 mhos dynamic characteristics input capacitance c iss v cc = 15 v 950 pf output capacitance c oss v ge = 0 v 100 transfer capacitance c rss f = 1 mhz 8.0 switching characteristics (note 1.) turnoff delay time t d(off) v cc = 300 v, i c = 10 a 14 m sec fall time t f r g = 1 k w , l = 300 m h 7.0 turnon delay time t d(on) v cc = 10 v, i c = 6.5 a 0.5 m sec rise time t r r g = 1 k w , r l = 1 w 4.5 gate charge q t v cc = 300 v tbd nc g q 1 i c = 15 a tbd q 2 v ge = 5 v tbd 1. pulse test: pulse width 300 m s, duty cycle 2%.
mgp15n43cl, mgb15n43cl http://onsemi.com 3 2.5 2.0 0.0 50 25 0 25 50 75 100 125 150 1.5 1.0 0.5 10000 1000 100 10 1 0 20 40 60 80 100 120 140 160 180 200 45 i c , collector current (amps) 40 35 30 25 20 15 10 5 0 012345678 45 40 35 30 25 20 15 10 5 0 012345678 30 25 20 15 10 5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 3.0 2.8 2.5 2.3 2.0 1.8 1.5 1.3 1.0 0.0 50 25 0 25 50 75 100 125 150 4.5 5 0.8 0.5 0.3 v ce , collector to emitter voltage (volts) v ce, collector to emitter voltage (volts) i c , collector current (amps) c, capacitance (pf) t j = 25 c v ge = 10.0 v v ge = 5.0 v v ge = 4.0 v v ge = 3.0 v t j = 150 c v ge = 10.0 v v ge = 5.0 v v ge = 4.0 v v ge = 3.0 v v ce = 10 v t j = 150 c t j = 25 c t j = 40 c v ge = 15 v i c = 5 a v ce, collector to emitter voltage (volts) c rss c iss c oss mean 4 s mean + 4 s mean i c = 1 ma i c , collector current (amps) threshold voltage (volts) i c = 10 a i c = 15 a v ge, gate to emitter voltage (volts) t j , junction temperature ( c) v ce, collector to emitter voltage (volts) temperature ( c) figure 1. output characteristics figure 2. output characteristics figure 3. transfer characteristics figure 4. collectortoemitter saturation voltage versus junction temperature figure 5. capacitance variation figure 6. threshold voltage versus temperature
mgp15n43cl, mgb15n43cl http://onsemi.com 4 s) switching speed ( s) switching time ( i l , latch current (amps) i l , latch current (amps) 20 18 16 14 12 10 8 6 4 2 0 250 500 750 1000 20 18 16 14 12 10 8 6 4 2 0 250 500 750 1000 25 20 15 10 5 0 50 25 0 25 50 75 100 125 150 25 20 15 10 5 0 4 2 0 6 8 10121416 30 25 20 15 5 0 2 1 034578910 6 20 16 12 8 4 0 25 125 0 50 75 100 175 150 18 14 10 6 2 150 c v cc = 50 v v ge = 5.0 v r g = 1000 w inductor (mh) temperature ( c) t c , case temperature ( c) i c , collector current (amps) r g , gate resistance (ohms) r g , gate resistance (ohms) v cc = 50 v v ge = 5.0 v r g = 1000 w 3.0 mh 6.0 mh v cc = 300 v v ge = 5.0 v t j = 150 c i c = 10 a l = 300 m h v cc = 300 v v ge = 5.0 v r g = 1000 w i c = 10 a l = 300 m h 10 t d(off) t f t d(off) t f t d(off) t f t d(off) t f s) switching time ( s) switching time 25 c v cc = 300 v v ge = 5.0 v t j = 25 c l = 300 h v cc = 300 v v ge = 5.0 v r g = 1000 w t j = 150 c l = 300 h ( figure 7. switching speed versus gate resistance figure 8. switching speed versus gate resistance figure 9. switching speed versus case temperature figure 10. total switching losses versus collector current figure 11. latch current versus inductor (typical) figure 12. latch current versus temperature (typical )
mgp15n43cl, mgb15n43cl http://onsemi.com 5 package dimensions style 9: pin 1. gate 2. collector 3. emitter 4. collector to220 threelead to220ab case 221a09 issue aa notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.405 9.66 10.28 c 0.160 0.190 4.07 4.82 d 0.025 0.035 0.64 0.88 f 0.142 0.147 3.61 3.73 g 0.095 0.105 2.42 2.66 h 0.110 0.155 2.80 3.93 j 0.018 0.025 0.46 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 --- 1.15 --- z --- 0.080 --- 2.04 b q h z l v g n a k f 123 4 d seating plane t c s t u r j
mgp15n43cl, mgb15n43cl http://onsemi.com 6 package dimensions style 3: pin 1. anode 2. cathode 3. anode 4. cathode d 2 pak case 418b03 issue d notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. seating plane s g d t m 0.13 (0.005) t 23 1 4 3 pl k j h v e c a dim min max min max millimeters inches a 0.340 0.380 8.64 9.65 b 0.380 0.405 9.65 10.29 c 0.160 0.190 4.06 4.83 d 0.020 0.035 0.51 0.89 e 0.045 0.055 1.14 1.40 g 0.100 bsc 2.54 bsc h 0.080 0.110 2.03 2.79 j 0.018 0.025 0.46 0.64 k 0.090 0.110 2.29 2.79 s 0.575 0.625 14.60 15.88 v 0.045 0.055 1.14 1.40 b m b
mgp15n43cl, mgb15n43cl http://onsemi.com 7 notes
mgp15n43cl, mgb15n43cl http://onsemi.com 8 on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information central/south america: spanish phone : 3033087143 (monfri 8:00am to 5:00pm mst) email : onlitspanish@hibbertco.com tollfree from mexico: dial 018002882872 for access then dial 8662979322 asia/pacific : ldc for on semiconductor asia support phone : 3036752121 (tuefri 9:00am to 1:00pm, hong kong time) toll free from hong kong & singapore: 00180044223781 email : onlitasia@hibbertco.com japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. mgp15n43cl/d north america literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com fax response line: 3036752167 or 8003443810 toll free usa/canada n. american technical support : 8002829855 toll free usa/canada europe: ldc for on semiconductor european support german phone : (+1) 3033087140 (monfri 2:30pm to 7:00pm cet) email : onlitgerman@hibbertco.com french phone : (+1) 3033087141 (monfri 2:00pm to 7:00pm cet) email : onlitfrench@hibbertco.com english phone : (+1) 3033087142 (monfri 12:00pm to 5:00pm gmt) email : onlit@hibbertco.com european tollfree access*: 0080044223781 *available from germany, france, italy, uk, ireland
|
